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STACKED-NANOSHEET GATE-ALL-AROUND FET WITH INSULATOR BETWEEN THE NANOSHEETS
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Abstract
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STACKED-NANOSHEET GATE-ALL-AROUND FET WITH INSULATOR BETWEEN THE NANOSHEETS
PCT NATIONAL PHASE APPLICATION
Published
Filed on 29 July 2022
Patent Information
| Application ID | 202247043507 |
| Date of Application | 29/07/2022 |
Documents
| Name | Date |
|---|---|
| 202247043507-FORM 3 [13-01-2023(online)].pdf | 13/01/2023 |
| 202247043507-Proof of Right [14-10-2022(online)].pdf | 14/10/2022 |
| 202247043507-COMPLETE SPECIFICATION [29-07-2022(online)].pdf | 29/07/2022 |
| 202247043507-DECLARATION OF INVENTORSHIP (FORM 5) [29-07-2022(online)].pdf | 29/07/2022 |
| 202247043507-DRAWINGS [29-07-2022(online)].pdf | 29/07/2022 |
| 202247043507-FORM 1 [29-07-2022(online)].pdf | 29/07/2022 |
| 202247043507-POWER OF AUTHORITY [29-07-2022(online)].pdf | 29/07/2022 |
| 202247043507-PRIORITY DOCUMENTS [29-07-2022(online)].pdf | 29/07/2022 |
| 202247043507-STATEMENT OF UNDERTAKING (FORM 3) [29-07-2022(online)].pdf | 29/07/2022 |
| 202247043507-TRANSLATIOIN OF PRIOIRTY DOCUMENTS ETC. [29-07-2022(online)].pdf | 29/07/2022 |
