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:“SEMICONDUCTOR NANOCRYSTALS WITH DEFECTS FOR HIGH EFFICIENCY EMISSION”

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:“SEMICONDUCTOR NANOCRYSTALS WITH DEFECTS FOR HIGH EFFICIENCY EMISSION”

ORDINARY APPLICATION

Published

date

Filed on 19 May 2016

Patent Information

Application ID201641017315
Date of Application19/05/2016

Documents

NameDate
316516.Form 27.pdf20/11/2023
316516-Form 27_Statement of working_26-09-2022.pdf26/09/2022
201641017315-EDUCATIONAL INSTITUTION(S) [12-05-2022(online)].pdf12/05/2022
201641017315-OTHERS [12-05-2022(online)].pdf12/05/2022
201641017315_Statement of Working_23-09-2021.pdf23/09/2021
201641017315-RELEVANT DOCUMENTS [12-03-2020(online)].pdf12/03/2020
201641017315-IntimationOfGrant22-07-2019.pdf22/07/2019
201641017315-PatentCertificate22-07-2019.pdf22/07/2019
Abstract_Granted 316516_22-07-2019.pdf22/07/2019
Claims_Granted 316516_22-07-2019.pdf22/07/2019
Description_Granted 316516_22-07-2019.pdf22/07/2019
Drawings_Granted 316516_22-07-2019.pdf22/07/2019
Marked Up Claims_Granted 316516_22-07-2019.pdf22/07/2019
201641017315-CLAIMS [11-01-2019(online)].pdf11/01/2019
201641017315-CORRESPONDENCE [11-01-2019(online)].pdf11/01/2019
201641017315-FER_SER_REPLY [11-01-2019(online)].pdf11/01/2019
201641017315-FER.pdf29/08/2018
201641017315-Correspondence-F1-PA-200716.pdf29/07/2016
201641017315-Form 1-200716.pdf29/07/2016
201641017315-Power of Attorney-200716.pdf29/07/2016
Description(Complete) [19-05-2016(online)].pdf19/05/2016
Drawing [19-05-2016(online)].pdf19/05/2016
Form 18 [19-05-2016(online)].pdf19/05/2016
Form 18 [19-05-2016(online)].pdf_57.pdf19/05/2016
Form 3 [19-05-2016(online)].pdf19/05/2016
Form 5 [19-05-2016(online)].pdf19/05/2016
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