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Abstract
Information
Inventors
Applicants
Specification
Documents
ROBUST HALFBRIDGE
PCT NATIONAL PHASE APPLICATION
Published
Filed on 21 November 2024
Abstract
A semiconductor transistor comprising: a drain region; a plurality of source regions; and a plurality of gate regions interleaved with the source regions.
Patent Information
| Application ID | 202447090709 |
| Invention Field | ELECTRONICS |
| Date of Application | 21/11/2024 |
| Publication Number | 48/2024 |
Inventors
| Name | Address | Country | Nationality |
|---|---|---|---|
| VEPRINSKY, Valery | 16 HaPalmah Street 6706530 Tel Aviv | Israel | Israel |
| ROITER, Yulia | 5 Sitrin 7706705 Ashdod | Israel | Israel |
| SHERMAN, Daniel | C/O Visic Technologies Ltd. 7 Golda Meir 7403650 Ness Ziona | Israel | Israel |
Applicants
| Name | Address | Country | Nationality |
|---|---|---|---|
| VISIC TECHNOLOGIES LTD. | 7 Golda Meir 7403650 Ness Ziona | Israel | Israel |
Documents
| Name | Date |
|---|---|
| 202447090709-FORM 18 [23-11-2024(online)].pdf | 23/11/2024 |
| 202447090709-COMPLETE SPECIFICATION [21-11-2024(online)].pdf | 21/11/2024 |
| 202447090709-DECLARATION OF INVENTORSHIP (FORM 5) [21-11-2024(online)].pdf | 21/11/2024 |
| 202447090709-DRAWINGS [21-11-2024(online)].pdf | 21/11/2024 |
| 202447090709-FORM 1 [21-11-2024(online)].pdf | 21/11/2024 |
| 202447090709-NOTIFICATION OF INT. APPLN. NO. & FILING DATE (PCT-RO-105-PCT Pamphlet) [21-11-2024(online)].pdf | 21/11/2024 |
| 202447090709-PRIORITY DOCUMENTS [21-11-2024(online)].pdf | 21/11/2024 |
