PROCESS FOR INCREASING SINGLE CRYSTAL OUTPUT

Abstract

Disclosed is a process for increasing the single crystal output, comprising: within 0-0.5 h after starting melting, a primary heater of a single crystal furnace gradually rises from 0 kw to a range of 65 kw to 75 kw, and at the same time, a secondary heater gradually rises from 0 kw to a range of 8 kw to 12 kw; within the time of 0.5 h to 6.5 h after melting, the primary heater of the single crystal furnace is kept in the range of 65 kw to 75 kw, and at the same time, the secondary heater is kept in the range of 8 kw-12 kw; within the time from 6.5 h after melting to initial re-dosing, the power of the primary heater of the single crystal furnace is increased to be in the range of 95 kw to 105 kw; and the power of the secondary heater is increased to be in the range of 88 kw to 92 kw. In the present application, melting of a silicon raw material is slowed down, the upper edge of a crucible is exposed, and the exposed baking time and temperature are greater than those of conventional processes, so that the inner wall of the upper edge of the crucible can be subjected to full phase change and then the effect of improving crystal formation is achieved.

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