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POLARIZATION DOPED ENHANCEMENT MODE P-TYPE GAN (PD-GAN) MOSFET: A METHOD OF MANUFACTURING THE SAME
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POLARIZATION DOPED ENHANCEMENT MODE P-TYPE GAN (PD-GAN) MOSFET: A METHOD OF MANUFACTURING THE SAME
ORDINARY APPLICATION
Published
Filed on 2 November 2021
Patent Information
| Application ID | 202111050241 |
| Date of Application | 02/11/2021 |
Documents
| Name | Date |
|---|---|
| 202111050241-Form-1-021121.pdf | 15/11/2021 |
| 202111050241-Form-2-021121.pdf | 15/11/2021 |
| 202111050241-Form-3-021121.pdf | 15/11/2021 |
