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Normally off Ga2O3 on Insulator Junction Less Drain Extended Field Effect Transistor

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Normally off Ga2O3 on Insulator Junction Less Drain Extended Field Effect Transistor

ORDINARY APPLICATION

Published

date

Filed on 13 May 2023

Patent Information

Application ID202341033746
Date of Application13/05/2023

Documents

NameDate
202341033746-FER.pdf10/11/2023
202341033746-EVIDENCE OF ELIGIBILTY RULE 24C1f [18-07-2023(online)].pdf18/07/2023
202341033746-FORM 18A [18-07-2023(online)].pdf18/07/2023
202341033746-FORM-9 [23-06-2023(online)].pdf23/06/2023
202341033746-COMPLETE SPECIFICATION [13-05-2023(online)].pdf13/05/2023
202341033746-DRAWINGS [13-05-2023(online)].pdf13/05/2023
202341033746-EDUCATIONAL INSTITUTION(S) [13-05-2023(online)].pdf13/05/2023
202341033746-EVIDENCE FOR REGISTRATION UNDER SSI(FORM-28) [13-05-2023(online)].pdf13/05/2023
202341033746-FORM 1 [13-05-2023(online)].pdf13/05/2023
202341033746-FORM FOR SMALL ENTITY(FORM-28) [13-05-2023(online)].pdf13/05/2023
202341033746-POWER OF AUTHORITY [13-05-2023(online)].pdf13/05/2023
202341033746-PROOF OF RIGHT [13-05-2023(online)].pdf13/05/2023
202341033746-STATEMENT OF UNDERTAKING (FORM 3) [13-05-2023(online)].pdf13/05/2023
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