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METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE
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Abstract
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METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE
PCT NATIONAL PHASE APPLICATION
Published
Filed on 4 September 2023
Patent Information
| Application ID | 202317059323 |
| Date of Application | 04/09/2023 |
Documents
| Name | Date |
|---|---|
| 202317059323-FORM-26 [26-10-2023(online)].pdf | 26/10/2023 |
| 202317059323-COMPLETE SPECIFICATION [04-09-2023(online)].pdf | 04/09/2023 |
| 202317059323-DECLARATION OF INVENTORSHIP (FORM 5) [04-09-2023(online)].pdf | 04/09/2023 |
| 202317059323-DRAWINGS [04-09-2023(online)].pdf | 04/09/2023 |
| 202317059323-FORM 1 [04-09-2023(online)].pdf | 04/09/2023 |
| 202317059323-PRIORITY DOCUMENTS [04-09-2023(online)].pdf | 04/09/2023 |
| 202317059323-STATEMENT OF UNDERTAKING (FORM 3) [04-09-2023(online)].pdf | 04/09/2023 |
