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Method for improving the ohmic-contact behaviour between a contact grid and an emitter layer in a bifacial silicon solar cell

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Method for improving the ohmic-contact behaviour between a contact grid and an emitter layer in a bifacial silicon solar cell

DIVISIONAL PCT NATIONAL PHASE APPLICATION

Published

date

Filed on 1 December 2022

Patent Information

Application ID202248069357
Date of Application01/12/2022

Documents

NameDate
202248069357-CLAIMS [06-12-2023(online)].pdf06/12/2023
202248069357-FER_SER_REPLY [06-12-2023(online)].pdf06/12/2023
202248069357-FORM 3 [06-12-2023(online)].pdf06/12/2023
202248069357-Information under section 8(2) [06-12-2023(online)].pdf06/12/2023
202248069357-OTHERS [06-12-2023(online)].pdf06/12/2023
202248069357-PETITION UNDER RULE 137 [06-12-2023(online)].pdf06/12/2023
202248069357-FORM 4(ii) [05-09-2023(online)].pdf05/09/2023
202248069357-Information under section 8(2) [05-09-2023(online)].pdf05/09/2023
202248069357-FER.pdf06/03/2023
202248069357-COMPLETE SPECIFICATION [01-12-2022(online)].pdf01/12/2022
202248069357-DECLARATION OF INVENTORSHIP (FORM 5) [01-12-2022(online)].pdf01/12/2022
202248069357-FORM 1 [01-12-2022(online)].pdf01/12/2022
202248069357-FORM 18 [01-12-2022(online)].pdf01/12/2022
202248069357-FORM-26 [01-12-2022(online)].pdf01/12/2022
202248069357-PRIORITY DOCUMENTS [01-12-2022(online)].pdf01/12/2022
202248069357-PROOF OF RIGHT [01-12-2022(online)].pdf01/12/2022
202248069357-REQUEST FOR EXAMINATION (FORM-18) [01-12-2022(online)].pdf01/12/2022
202248069357-STATEMENT OF UNDERTAKING (FORM 3) [01-12-2022(online)].pdf01/12/2022
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