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HIGH-DENSITY, LOW-POWER NEAR-SUBTHRESHOLD CNTFET BASED 10 TRANSISTOR SRAM CELL
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Abstract
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HIGH-DENSITY, LOW-POWER NEAR-SUBTHRESHOLD CNTFET BASED 10 TRANSISTOR SRAM CELL
ORDINARY APPLICATION
Published
Filed on 13 October 2021
Patent Information
| Application ID | 202121046705 |
| Date of Application | 13/10/2021 |
Documents
| Name | Date |
|---|---|
| Abstract1.jpg | 02/11/2021 |
| 202121046705-FORM-26 [28-10-2021(online)].pdf | 28/10/2021 |
| 202121046705-FORM-9 [28-10-2021(online)].pdf | 28/10/2021 |
| 202121046705-FORM 3 [14-10-2021(online)].pdf | 14/10/2021 |
| 202121046705-COMPLETE SPECIFICATION [13-10-2021(online)].pdf | 13/10/2021 |
| 202121046705-DRAWINGS [13-10-2021(online)].pdf | 13/10/2021 |
| 202121046705-ENDORSEMENT BY INVENTORS [13-10-2021(online)].pdf | 13/10/2021 |
