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GROWTH OF NACL SINGLE CRYSTAL BY LOW TEMPERATURE SLOW EVAPORATION METHOD
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GROWTH OF NACL SINGLE CRYSTAL BY LOW TEMPERATURE SLOW EVAPORATION METHOD
ORDINARY APPLICATION
Published
Filed on 4 January 2021
Patent Information
| Application ID | 202141000185 |
| Date of Application | 04/01/2021 |
Documents
| Name | Date |
|---|---|
| 202141000185-Correspondnece_Form-13_25-01-2021.pdf | 25/01/2021 |
| 202141000185-Form-1_Form-13_25-01-2021.pdf | 25/01/2021 |
| 202141000185-Form13_ Title Amendment_25-01-2021.pdf | 25/01/2021 |
| 202141000185-Form13_Title Amendment_25-01-2021.pdf | 25/01/2021 |
| 202141000185-Abstract_As Filed_04-01-2021.pdf | 04/01/2021 |
| 202141000185-Claims_As Filed_04-01-2021.pdf | 04/01/2021 |
| 202141000185-Correspondence_04-01-2021.pdf | 04/01/2021 |
| 202141000185-Description Complete_As Filed_04-01-2021.pdf | 04/01/2021 |
| 202141000185-Form1_As Filed_04-01-2021.pdf | 04/01/2021 |
| 202141000185-Form2 (Title Page)_Complete_04-01-2021.pdf | 04/01/2021 |
| 202141000185-Form3_As Filed_04-01-2021.pdf | 04/01/2021 |
