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GATE-ALL-AROUND (GAA) TRANSISTORS WITH ADDITIONAL BOTTOM CHANNEL FOR REDUCED PARASITIC CAPACITANCE AND METHODS OF FABRICATION

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GATE-ALL-AROUND (GAA) TRANSISTORS WITH ADDITIONAL BOTTOM CHANNEL FOR REDUCED PARASITIC CAPACITANCE AND METHODS OF FABRICATION

PCT NATIONAL PHASE APPLICATION

Published

date

Filed on 29 September 2022

Patent Information

Application ID202247055924
Date of Application29/09/2022

Documents

NameDate
202247055924-FORM 3 [29-03-2023(online)].pdf29/03/2023
202247055924-Proof of Right [10-01-2023(online)].pdf10/01/2023
202247055924-COMPLETE SPECIFICATION [29-09-2022(online)].pdf29/09/2022
202247055924-DECLARATION OF INVENTORSHIP (FORM 5) [29-09-2022(online)].pdf29/09/2022
202247055924-DRAWINGS [29-09-2022(online)].pdf29/09/2022
202247055924-FORM 1 [29-09-2022(online)].pdf29/09/2022
202247055924-POWER OF AUTHORITY [29-09-2022(online)].pdf29/09/2022
202247055924-PRIORITY DOCUMENTS [29-09-2022(online)].pdf29/09/2022
202247055924-STATEMENT OF UNDERTAKING (FORM 3) [29-09-2022(online)].pdf29/09/2022
202247055924-TRANSLATIOIN OF PRIOIRTY DOCUMENTS ETC. [29-09-2022(online)].pdf29/09/2022

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