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FIN FIELD-EFFECT TRANSISTOR STATIC RANDOM ACCESS MEMORY DEVICES WITH P-CHANNEL METAL-OXIDESEMICONDUCTOR PASS GATE TRANSISTORS
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FIN FIELD-EFFECT TRANSISTOR STATIC RANDOM ACCESS MEMORY DEVICES WITH P-CHANNEL METAL-OXIDESEMICONDUCTOR PASS GATE TRANSISTORS
PCT NATIONAL PHASE APPLICATION
Published
Filed on 30 December 2016
Patent Information
| Application ID | 201647044999 |
| Date of Application | 30/12/2016 |
Documents
| Name | Date |
|---|---|
| 201647044999-FER.pdf | 17/03/2020 |
| 201647044999-FORM 18 [09-07-2018(online)].pdf | 09/07/2018 |
| abstract 201647044999.jpg | 05/05/2017 |
| Correspondence by Agent_Certified Copy Of Assignment_02-05-2017.pdf | 02/05/2017 |
| Other Patent Document [27-04-2017(online)].pdf | 27/04/2017 |
| Form 3 [11-04-2017(online)].pdf | 11/04/2017 |
| 201647044999.pdf | 02/01/2017 |
| Description(Complete) [30-12-2016(online)].pdf | 30/12/2016 |
| Description(Complete) [30-12-2016(online)].pdf_43.pdf | 30/12/2016 |
| Drawing [30-12-2016(online)].pdf | 30/12/2016 |
| Form 3 [30-12-2016(online)].pdf | 30/12/2016 |
| Form 5 [30-12-2016(online)].pdf | 30/12/2016 |
| Power of Attorney [30-12-2016(online)].pdf | 30/12/2016 |
