FILM FORMATION METHOD AND FILM FORMATION DEVICE

Abstract

The present invention is a film formation method for discharging a mist onto a heated substrate from a nozzle and forming a crystalline oxide film via a mist CVD method, said method being characterized in that: the nozzle includes, at least, two or more gas inlets which face each other, a gas mixture part to which the gas inlets are provided, and a gas outlet from which the mist is discharged; and when the volume of the gas mixture part is defined as V (cm3), the linear velocity L (cm/second) of the mist at one of the two or more gas inlets which face each other is L=0.8V-200. Thus, provided are: a film formation method for forming a crystalline oxide film that has excellent crystallinity, that has a good in-plane film thickness distribution even when having a large surface area and a thin film thickness, and that has excellent semiconductor properties when used in a semiconductor device; and a film formation device for performing the film formation method.

Documents