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DUAL-MATERIAL, GATE-OXIDE-STACK TFET BASED NO2 GAS SENSOR AND METHOD FOR MANUFACTURING THEREOF

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DUAL-MATERIAL, GATE-OXIDE-STACK TFET BASED NO2 GAS SENSOR AND METHOD FOR MANUFACTURING THEREOF

ORDINARY APPLICATION

Published

date

Filed on 25 June 2022

Information

Application ID202211036509
Date of Application25/06/2022

Documents

NameDate
202211036509-Correspondence-040722.pdf07/07/2022
202211036509-GPA-040722.pdf07/07/2022
202211036509-Others-040722.pdf07/07/2022
202211036509-COMPLETE SPECIFICATION [25-06-2022(online)].pdf25/06/2022
202211036509-DRAWINGS [25-06-2022(online)].pdf25/06/2022
202211036509-FORM 1 [25-06-2022(online)].pdf25/06/2022
202211036509-FORM-26 [25-06-2022(online)].pdf25/06/2022