DGS ANTENNA FOR 5G EFFICIENT COMMUNICATION NETWORKS

Abstract

The present invention describes the architecture of a microstrip patch antenna equipped with a novel E-slot and pellet drum shaped defected ground structure fitted for 5G mm wave frequency communication. The antenna, constructed on FR4 substrate is aimed at working in two prominent 5G frequency bands 32 GHz and 40 GHz. The E-slot and new DGS structure gives the antenna higher performance providing a gain of 18.3 dB at 32 GHz and 20.8 dB at 40 GHz. The directivity is equally noticeable. The design offers an enhancement of impedance matching; since the Voltage Standing Wave Ratio (VSWR) is observed to be low that is very good. The simulation of the antenna displayed improved gain, directivity and better efficiency suggesting its suitability for 5G. The compact size of this antenna with high electrical performance makes this antenna a suitable candidate for tackling the growing demands of performance and bandwidth of 5G millimetre wave technology.

Specification

Description:The invention describes a "DGS antenna for 5G efficient communication networks", designed to overcome the 4G communication network limitations by enhancing the gain and directivity of the antenna for making it suitable for high-frequency 5G applications. The Defected Ground Structure (DGS) antenna is designed to achieve better impedance matching, resulting in the Voltage Standing Wave Ratio (VSWR) values that minimize signal reflection and improving power efficiency. It extends the bandwidth and improves the radiation efficiency by using an advanced E-slot design in combination with a pellet drum-shaped defected ground structure (DGS). The antenna is made to be compact and easy to fabricate, using a cost-effective FR4 substrate while maintaining high performance, making it ideal for large-scale production and integration into 5G devices.
A substrate material is used for the antenna fabrication that is a dielectric material, an FR4 used widely in radio frequency (RF) devices. The dielectric constant of this material is 4.4. The thickness of the material is such that it allows the antenna to be operable at millimeter-wave frequencies. This substrate allows holding the patch and the ground plane in position while affecting the electrical characteristics of the antenna. The use of FR4 provides grounds for an inexpensive and mass production of the antenna in the current invention without compromising on the performance in the appropriate bands. The FR4 as the dielectric primarily supports structures of the circuit as optimized for other 5G frequencies such as 32 GHz and 40 GHz.
The microstrip patch antenna with the E-slot design has a rectangular E-slot geometry incorporated into the patch to broaden the bandwidth and aid impedance matching for frequencies over a quite large range. The E-slot design maximises the currents distribution that are concentrated on the patch surface and therefore enhance its radiation efficiency and the antenna overall impedance bandwidth, which ensures that the wide band antenna is effective in the fifth generation (5G) frequency spectrum.
The Defected Ground Structure (DGS) is placed underneath the patch in a new Pellet Drum shape that acts as an obstruction to the ground. This defect modifies the ground plane's current distribution, controlling unwanted surface wave propagation. The Pellet Drum-shaped DGS design used in this current invention improves the antenna's performance by enhancing bandwidth, improving radiation characteristics, and reducing back lobe radiation. It also enhances gain and directivity by suppressing unwanted harmonics and providing better signal confinement. This design of the pellet drum-shaped (DGS) offers a better electrical performance and power handling.
The antenna in this invention provides a dual-band operation making it capable of operating at the two main frequency bands: 32 GHz and 40 GHz. These bands are important in the 5G millimeter-wave communication that ensures the delivery of high data with low latency.
Parameter Analysis: The satisfactory occasions and arrangements for growing this patch antenna design are supplied. Achieving twin-band functioning at the frequencies of 32GHz and 38 GHz obtained unique interest in the microstrip patch antenna parameter evaluation. The key design parameters, along with substrate length, patch geometry, and slot dimensions, have been tuned throughout the optimization segment to assure resonance at each goal frequencies. The exceptional configurations for reaching the resonance and impedance matching at 32 GHz and 40 GHz have been achieved by methodically adjusting those parameters and modelling the antenna's performance using the computer simulated technology (CST) Microwave Suite. Moreover, it changed into essential to apply FR4 substrate with a relative permittivity (e?) of 4.4 considering the dual-band operation even as preserving compactness and affordability. The parameter optimization of parameters is done accordingly. Table 1 depicts the parameters of the proposed design.



Table 1: Parameters of the proposed design
Parameter Symbols Details of the Parameters Value (in mm)
WS Width of substrate 7.5
LS Length of substrate 7.5
Ts Thickness of patch 1.6
W Width of patch 2.75
L Length of patch 3.5
WF Width of feed 0.3
LF Length of feed 1.3






Return Loss (S11 Parameters): The values recorded for return loss (S11 parameters) signify that the signals are not reflected:
a. S11 at 32 GHz: The return loss at 32 GHz has been taken as -40.00 dB that demonstrates the effective adoption of the antenna to the feeding structure with good reflection at this frequency.
b. S11 at 40 GHz: The return loss at 40 GHz is measured at -48.29 dB that is within tolerance because of the lack of reflections and effective signal feeding or transmission.
Voltage Standing Wave Ratio (VSWR): The invention reaches close to the ideal conditions by providing almost all the input voltage to the microstrip antenna. This reduces signal reflection and ensures maximum power transmission. The VSWR values indicate that the impedance is uplifted to a good level:
a. VSWR at 32 GHz: The VSWR at 32 GHz has been observed to be 1.01, which indicates that the feed system and the antenna are closely matched in this frequency.
b. VSWR at 40 GHz: The VSWR at 40 GHz has been observed to be 1.00, proper matching is seen which means that the signal loss is very low when the signal is being supplied to the feed system.
Gain: The maximum gain and directivity of the antenna have been attained without compromising design. Such high gain and directivity are essential in long distance high speed 5G communication and these attributes are normally beyond the reach of standard microstrip antennas. The values recorded show that the radiation is primarily in one direction:
a. Gain at 32 GHz: Measuring at this specific frequency, the antenna provides a gain of 18.3 dB at 32 GHz that allows the antenna to beam out radiation at very good angles which are intended for long distance 5G calls.
b. Gain at 40 GHz: The value increases to 20.8 dB which is realized at 40 GHz, thereby improving the efficiency of the antenna in transmission and reception of more focused signals in one direction.
Directivity: The directivity values define the scope of the antenna in concentrating the power towards a target area:
a. Directivity at 32 GHz: The directivity at 32 GHz has been observed to be 18.3 dB, indicating the antenna's ability to focus energy in a particular direction with minimal losses.
b. Directivity at 40 GHz: The directivity at 40 GHz has been observed to be 20.9 dB, which ensures even higher focusing efficiency at 40 GHz.
Performance Characteristics of the Antenna in 5G Communication: The components used in this invention function in a way that improves the overall efficiency and effectiveness of the antenna in 5G communication systems:
a. High Efficiency: The E-slot inside the patch and the Pellet Drum Shaped DGS produces a very good radiation pattern that helps to reduce the losses and improve the efficiency.
b. Beam Steering and Focus: The geometry of the antenna allows the deflection of the beam and ensures high directivity making it more ideal for 5G base station and in mobile applications where the take-off angles are crucial and the types of signals are such that interference is to be avoided.
c. High Production Frequency: The use of FR4 substrate guarantees that the antenna is of low mass production and acceptable performance.
d. Compact Design: The microstrip design with the advanced E-slot and unique DGS ensures a compact form factor, making it easy to integrate into modern 5G devices and base stations.
Best Mode of Operation of the Invention
The process begins by setting up a new project in CST Microwave Studio, selecting the Time Domain solver for antennas, and establishing the operating frequency range. The substrate and materials are defined by specifying the FR4 substrate with a dielectric constant of 4.4 and an appropriate thickness. Materials for the patch, ground plane, and other components are assigned. Subsequently, the geometry design is initiated, creating a rectangular patch with an embedded E-slot using CST's drawing tools. The Pellet Drum Shaped Defected Ground Structure (DGS) is then drawn on the ground plane beneath the patch. The port and excitation setup involves defining the feed port, such as a microstrip or coaxial feed, to excite the antenna accurately. This setup is critical for obtaining accurate simulation results.
The simulation is run to calculate S-parameters, gain, VSWR, and other key performance indicators, employing either time-domain or frequency-domain solvers based on model complexity and required outcomes. Post-processing involves analyzing the results, checking the S11 parameter, gain, VSWR, and radiation patterns at the target frequencies of 32 GHz and 40 GHz. Visualizations of the current distribution and radiation pattern are reviewed to verify the functionality of the E-slot and DGS. If the results do not initially meet design criteria, adjustments are made to the patch, slot, or DGS dimensions as required, followed by rerunning the simulation. CST's parameter sweep and optimization tools are utilized to refine the design for optimal performance. Upon completing the design, simulation data, including S-parameters, VSWR plots, radiation patterns, and gain values, are exported for further analysis and documentation.
The steps of the process include choosing the FR4 substrate due to its dielectric constant (4.4) and cost-effectiveness, making it ideal for operating at 32 GHz and 40 GHz frequencies. The patch design involves creating a rectangular microstrip patch on the substrate with an advanced E-slot to enhance bandwidth and impedance matching. The overall composition includes the FR4 substrate, a copper-based rectangular patch with an E-slot, and a ground plane with the Pellet Drum Shaped DGS. The microstrip line technique serves as the feeding mechanism, while the Pellet Drum Shaped DGS on the ground plane controls surface waves and boosts radiation efficiency.
This invention provides a highly efficient, compact, and cost-effective antenna solution for 5G communication networks, addressing the needs for high gain, directivity, and impedance matching in the millimeter-wave frequency spectrum. , Claims:1. A DGS antenna for 5G efficient communication networks, comprising:
a. a microstrip patch antenna fabricated on a dielectric substrate, wherein the substrate is FR4 with a dielectric constant of 4.4 and a thickness allowing operation at millimeter-wave frequencies;
b. an advanced E-slot embedded in the microstrip patch, configured to broaden the bandwidth and enhance impedance matching, thereby optimizing current distribution and radiation efficiency across a wide frequency range; and
c. a defected ground structure (DGS) positioned below the patch, configured in a pellet drum shape design to alter current distribution on the ground plane, reduce unwanted surface wave propagation, and suppress harmonics, thus improving gain, directivity, and minimizing back lobe radiation,
wherein the antenna achieves a near-ideal Voltage Standing Wave Ratio (VSWR) values of approximately 1.01 at 32 GHz and 1.00 at 40 GHz, thus minimizing signal reflection and ensuring maximum power transmission; provides a maximum gain of 18.3 dB at 32 GHz and 20.8 dB at 40 GHz, and directivity values of 18.3 dB at 32 GHz and 20.9 dB at 40 GHz, enabling efficient long-distance, high-speed 5G communications; and wherein the antenna is designed to support compact integration into 5G devices and base stations while facilitating a cost-effective production.
2. The DGS antenna as claimed in claim 1, wherein the FR4 substrate has a width of 7.5 mm and a length of 7.5 mm; the thickness, width and length of the patch is 1.6 mm, 2.75 mm and 3.5 mm, respectively; the width and length of the feed is 0.3 mm and 1.3 mm, respectively; the parameters optimized for efficient support of the microstrip patch and ground plane for millimeter-wave operations.
3. The DGS antenna as claimed in claim 1, wherein the E-slot geometry embedded in the patch is configured to maximize current concentration on the patch surface, further enhancing the antenna's impedance bandwidth for fifth-generation (5G) frequency spectrum applications.
4. The DGS antenna as claimed in claim 1, wherein the pellet drum-shaped DGS enhances the bandwidth and radiation characteristics by altering the ground plane's current distribution and reducing unwanted surface wave propagation.
5. The DGS antenna as claimed in claim 1, wherein the return loss (S11 parameter) at 32 GHz is -40.00 dB and at 40 GHz is -48.29 dB, indicating minimal reflection and optimal adaptation to the feeding structure at these frequencies.
6. The DGS antenna as claimed in claim 1, wherein the E-slot design in the microstrip patch contributes to high radiation efficiency by concentrating currents in the patch surface area, improving the overall impedance matching and bandwidth.
7. The DGS antenna as claimed in claim 1, wherein the antenna is configured to provide dual-band operation in the 32 GHz and 40 GHz frequency bands that are critical for high data rate, low-latency 5G millimeter-wave communication.
8. The DGS antenna as claimed in claim 1, wherein the gain and directivity values of 18.3 dB and 18.3 dB, respectively at 32 GHz; and the gain and directivity values of 20.8 dB and 20.9 dB, respectively at 40 GHz, allow the antenna to transmit and receive signals with improved focus and reduced losses.
9. The DGS antenna as claimed in claim 1, wherein the unique DGS design improves power handling and provides better signal confinement, facilitating reliable operation under high power conditions typically encountered in 5G communication networks.
10. The DGS antenna as claimed in claim 1, wherein the use of the FR4 substrate contributes to a cost-effective, mass-producible antenna solution that has the potential to be integrated into 5G communication devices and base stations without sacrificing performance at millimeter-wave frequencies.

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