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DESIGN AND PERFORMANCE OF CHARGE-PLASMA-BASED SCHOTTKY-FET CMOS CIRCUIT RING OSCILLATOR FOR HIGH DENSITY ICS
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DESIGN AND PERFORMANCE OF CHARGE-PLASMA-BASED SCHOTTKY-FET CMOS CIRCUIT RING OSCILLATOR FOR HIGH DENSITY ICS
ORDINARY APPLICATION
Published
Filed on 2 January 2023
Patent Information
| Application ID | 202341000087 |
| Date of Application | 02/01/2023 |
Documents
| Name | Date |
|---|---|
| 202341000087-Abstract_As Filed_02-01-2023.pdf | 02/01/2023 |
| 202341000087-Claims_As Filed_02-01-2023.pdf | 02/01/2023 |
| 202341000087-Description Complete_As Filed_02-01-2023.pdf | 02/01/2023 |
| 202341000087-Drawing_As Filed_02-01-2023.pdf | 02/01/2023 |
| 202341000087-Form-1_As Filed_02-01-2023.pdf | 02/01/2023 |
| 202341000087-Form-2 (Title Page)_Complete_02-01-2023.pdf | 02/01/2023 |
