COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR COMPATIBLE FERROELECTRIC MEMORY DEVICE

Abstract

ABSTRACT A complementary metal oxide semiconductor compatible ferroelectric memory device (100), comprising a hafnium zirconium oxide film (102) doped with dysprosium and tantalum (Hf?Zr1??Dy0.1Ta0.1O2), where x is in the range from 0.5 to 0.75, formed on a silicon substrate and a metal-insulator-semiconductor (MIS) (104), comprising a platinum electrode deposited on the hafnium zirconium oxide film, wherein the MIS demonstrates low leakage current density and negligible hysteresis.

Specification

Description:FIELD OF THE DISCLOSURE
[0001] This invention generally relates to a field of memory devices and in particular relates to a complementary metal oxide semiconductor (CMOS) compatible ferroelectric memory device.
BACKGROUND

[0002] The subject matter discussed in the background section should not be assumed to be prior art merely as a result of its mention in the background section. Similarly, a problem mentioned in the background section or associated with the subject matter of the background section should not be assumed to have been previously recognized in the prior art. The subject matter in the background section merely represents different approaches, which in and of themselves may also correspond to implementations of the claimed technology.
[0003] Ferroelectric memory devices are essential components in the advancement of non-volatile memory technologies. These devices leverage the unique properties of ferroelectric materials, which can retain polarization states even after the removal of an electri , Claims:1. A complementary metal oxide semiconductor compatible ferroelectric memory device (100) comprises:
a hafnium zirconium oxide film (102) doped with dysprosium and tantalum (Hf?Zr1??Dy0.1Ta0.1O2), where x is in the range from 0.5 to 0.75, formed on a silicon substrate;
a metal-insulator-semiconductor (MIS) (104), comprising a platinum electrode deposited on the hafnium zirconium oxide film, wherein the MIS demonstrates low leakage current density and negligible hysteresis.

2. The device as claimed in claim 1, wherein the hafnium zirconium oxide film (102) is deposited using pulsed laser deposition (PLD) at a temperature in the range of 500°C - 700°C.

3. The device as claimed in claim 1, wherein the MIS (104) corresponds to a low current leakage density of approximately 1 A/cm².

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