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AN 8T SRAM CIRCUIT WITH LOW LEAKAGE AND HIGH DATA STABILITY AT IDLE MODE
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Abstract
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AN 8T SRAM CIRCUIT WITH LOW LEAKAGE AND HIGH DATA STABILITY AT IDLE MODE
ORDINARY APPLICATION
Published
Filed on 11 October 2023
Patent Information
| Application ID | 202321068468 |
| Date of Application | 11/10/2023 |
Documents
| Name | Date |
|---|---|
| Abstact.jpg | 31/10/2023 |
| 202321068468-FORM-26 [12-10-2023(online)].pdf | 12/10/2023 |
| 202321068468-Proof of Right [12-10-2023(online)].pdf | 12/10/2023 |
| 202321068468-COMPLETE SPECIFICATION [11-10-2023(online)].pdf | 11/10/2023 |
| 202321068468-DECLARATION OF INVENTORSHIP (FORM 5) [11-10-2023(online)].pdf | 11/10/2023 |
| 202321068468-DRAWINGS [11-10-2023(online)].pdf | 11/10/2023 |
| 202321068468-FORM 1 [11-10-2023(online)].pdf | 11/10/2023 |
| 202321068468-FORM-9 [11-10-2023(online)].pdf | 11/10/2023 |
| 202321068468-POWER OF AUTHORITY [11-10-2023(online)].pdf | 11/10/2023 |
| 202321068468-REQUEST FOR EARLY PUBLICATION(FORM-9) [11-10-2023(online)].pdf | 11/10/2023 |
