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A PROCESS FOR FABRICATING AN UNDOPED TRANSITION METAL OXIDE (TMO) BASED P-N HOMOJUNCTION DIODE WITH HIGH RECTIFICATION EFFICIENCY
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A PROCESS FOR FABRICATING AN UNDOPED TRANSITION METAL OXIDE (TMO) BASED P-N HOMOJUNCTION DIODE WITH HIGH RECTIFICATION EFFICIENCY
ORDINARY APPLICATION
Published
Filed on 27 May 2015
Patent Information
| Application ID | 581/KOL/2015 |
| Date of Application | 27/05/2015 |
Documents
| Name | Date |
|---|---|
| 581-KOL-2015-IntimationOfGrant13-07-2020.pdf | 13/07/2020 |
| 581-KOL-2015-PatentCertificate13-07-2020.pdf | 13/07/2020 |
| 581-KOL-2015-FER_SER_REPLY [09-04-2019(online)].pdf | 09/04/2019 |
| 581-KOL-2015-OTHERS [09-04-2019(online)].pdf | 09/04/2019 |
| 581-KOL-2015-PETITION UNDER RULE 137 [09-04-2019(online)].pdf | 09/04/2019 |
| 581-KOL-2015-FER.pdf | 07/01/2019 |
| Form 26 [22-06-2016(online)].pdf | 22/06/2016 |
| Other Patent Document [01-06-2016(online)].pdf | 01/06/2016 |
| DW.pdf_964.pdf | 24/06/2015 |
| F2.pdf_963.pdf | 24/06/2015 |
| F3.pdf_966.pdf | 24/06/2015 |
| FOA.pdf_965.pdf | 24/06/2015 |
| DW.pdf | 04/06/2015 |
| F2.pdf | 04/06/2015 |
| F3.pdf | 04/06/2015 |
| FOA.pdf | 04/06/2015 |
