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A PHOSPHORUS MONOLAYER DOPED SILICON SEMICONDUCTOR DEVICE AND A METHOD OF FABRICATING THE SAME
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Abstract
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DIVISIONAL ORDINARY APPLICATION
Published
Filed on 19 April 2021
Patent Information
| Application ID | 202122018050 |
| Date of Application | 19/04/2021 |
Documents
| Name | Date |
|---|---|
| 202122018050-US(14)-HearingNotice-(HearingDate-31-01-2024).pdf | 04/01/2024 |
| 202122018050-FER_SER_REPLY [26-04-2022(online)].pdf | 26/04/2022 |
| 202122018050-OTHERS [26-04-2022(online)].pdf | 26/04/2022 |
| 202122018050-Proof of Right [26-04-2022(online)].pdf | 26/04/2022 |
| 202122018050-FER.pdf | 29/10/2021 |
| Abstract1.jpg | 19/10/2021 |
| 202122018050-FORM-26 [12-07-2021(online)].pdf | 12/07/2021 |
| 202122018050-FORM-8 [27-04-2021(online)].pdf | 27/04/2021 |
| 202122018050-COMPLETE SPECIFICATION [19-04-2021(online)].pdf | 19/04/2021 |
| 202122018050-DECLARATION OF INVENTORSHIP (FORM 5) [19-04-2021(online)].pdf | 19/04/2021 |
| 202122018050-DRAWINGS [19-04-2021(online)].pdf | 19/04/2021 |
| 202122018050-FORM 1 [19-04-2021(online)].pdf | 19/04/2021 |
| 202122018050-FORM 18 [19-04-2021(online)].pdf | 19/04/2021 |
| 202122018050-REQUEST FOR EXAMINATION (FORM-18) [19-04-2021(online)].pdf | 19/04/2021 |
| 202122018050-STATEMENT OF UNDERTAKING (FORM 3) [19-04-2021(online)].pdf | 19/04/2021 |
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