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A MULTILAYER GATE METAL OXIDE SEMICONDUCTOR FET FOR REDUCING SHORT CHANNEL EFFECT
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Abstract
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A MULTILAYER GATE METAL OXIDE SEMICONDUCTOR FET FOR REDUCING SHORT CHANNEL EFFECT
ORDINARY APPLICATION
Published
Filed on 8 May 2020
Patent Information
| Application ID | 202041019570 |
| Date of Application | 08/05/2020 |
Documents
| Name | Date |
|---|---|
| 202041019570-IntimationOfGrant21-12-2021.pdf | 21/12/2021 |
| 202041019570-PatentCertificate21-12-2021.pdf | 21/12/2021 |
| 202041019570-ABSTRACT [27-10-2021(online)].pdf | 27/10/2021 |
| 202041019570-CLAIMS [27-10-2021(online)].pdf | 27/10/2021 |
| 202041019570-CORRESPONDENCE [27-10-2021(online)].pdf | 27/10/2021 |
| 202041019570-DRAWING [27-10-2021(online)].pdf | 27/10/2021 |
| 202041019570-FER_SER_REPLY [27-10-2021(online)].pdf | 27/10/2021 |
| 202041019570-OTHERS [27-10-2021(online)].pdf | 27/10/2021 |
| 202041019570-FER.pdf | 18/10/2021 |
| 202041019570-FORM-26 [28-06-2020(online)].pdf | 28/06/2020 |
| 202041019570-COMPLETE SPECIFICATION [08-05-2020(online)].pdf | 08/05/2020 |
| 202041019570-DRAWINGS [08-05-2020(online)].pdf | 08/05/2020 |
| 202041019570-FIGURE OF ABSTRACT [08-05-2020(online)].pdf | 08/05/2020 |
| 202041019570-FORM 1 [08-05-2020(online)].pdf | 08/05/2020 |
| 202041019570-FORM 18 [08-05-2020(online)].pdf | 08/05/2020 |
| 202041019570-FORM-9 [08-05-2020(online)].pdf | 08/05/2020 |
| 202041019570-REQUEST FOR EARLY PUBLICATION(FORM-9) [08-05-2020(online)].pdf | 08/05/2020 |
| 202041019570-REQUEST FOR EXAMINATION (FORM-18) [08-05-2020(online)].pdf | 08/05/2020 |
