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A MULTI-LAYER GATE STACK FOR ENHANCEMENT-MODE p-GaN-BASED FIELD EFFECT TRANSISTOR AND DIODE
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Abstract
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A MULTI-LAYER GATE STACK FOR ENHANCEMENT-MODE p-GaN-BASED FIELD EFFECT TRANSISTOR AND DIODE
ORDINARY APPLICATION
Published
Filed on 26 August 2022
Patent Information
| Application ID | 202241048779 |
| Date of Application | 26/08/2022 |
Documents
| Name | Date |
|---|---|
| 202241048779-FER.pdf | 26/10/2023 |
| 202241048779-COMPLETE SPECIFICATION [26-08-2023(online)].pdf | 26/08/2023 |
| 202241048779-CORRESPONDENCE-OTHERS [26-08-2023(online)].pdf | 26/08/2023 |
| 202241048779-DRAWING [26-08-2023(online)].pdf | 26/08/2023 |
| 202241048779-EVIDENCE OF ELIGIBILTY RULE 24C1h [26-08-2023(online)].pdf | 26/08/2023 |
| 202241048779-FORM 18A [26-08-2023(online)].pdf | 26/08/2023 |
| 202241048779-FORM-9 [26-08-2023(online)].pdf | 26/08/2023 |
| 202241048779-Proof of Right [02-02-2023(online)].pdf | 02/02/2023 |
| 202241048779-DECLARATION OF INVENTORSHIP (FORM 5) [26-08-2022(online)].pdf | 26/08/2022 |
| 202241048779-DRAWINGS [26-08-2022(online)].pdf | 26/08/2022 |
| 202241048779-EDUCATIONAL INSTITUTION(S) [26-08-2022(online)].pdf | 26/08/2022 |
| 202241048779-FORM 1 [26-08-2022(online)].pdf | 26/08/2022 |
| 202241048779-POWER OF AUTHORITY [26-08-2022(online)].pdf | 26/08/2022 |
| 202241048779-PROVISIONAL SPECIFICATION [26-08-2022(online)].pdf | 26/08/2022 |
| 202241048779-STATEMENT OF UNDERTAKING (FORM 3) [26-08-2022(online)].pdf | 26/08/2022 |
