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A METHOD OF FABRICATING ZINC OXIDE BASED HETEROSTRUCTURE FOR HIGH ELECTRON MOBILITY TRANSISTOR
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Abstract
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A METHOD OF FABRICATING ZINC OXIDE BASED HETEROSTRUCTURE FOR HIGH ELECTRON MOBILITY TRANSISTOR
ORDINARY APPLICATION
Published
Filed on 1 March 2017
Patent Information
| Application ID | 201721007309 |
| Date of Application | 01/03/2017 |
Documents
| Name | Date |
|---|---|
| 201721007309-IntimationOfGrant28-12-2023.pdf | 28/12/2023 |
| 201721007309-PatentCertificate28-12-2023.pdf | 28/12/2023 |
| 201721007309-CLAIMS [03-01-2022(online)].pdf | 03/01/2022 |
| 201721007309-FER_SER_REPLY [03-01-2022(online)].pdf | 03/01/2022 |
| 201721007309-FER.pdf | 18/10/2021 |
| 201721007309-FORM-8 [26-06-2021(online)].pdf | 26/06/2021 |
| 201721007309-FORM 18 [29-07-2020(online)].pdf | 29/07/2020 |
| Abstract1.jpg | 11/08/2018 |
| 201721007309-Changing Name-Nationality-Address For Service [07-08-2017(online)].pdf | 07/08/2017 |
| 201721007309-ORIGINAL UNDER RULE 6 (1A)-19-05-2017.pdf | 19/05/2017 |
| Other Patent Document [09-05-2017(online)].pdf | 09/05/2017 |
| 201721007309-ORIGINAL UNDER RULE 6(1A)-02-05-2017.pdf | 02/05/2017 |
| Form 26 [22-04-2017(online)].pdf | 22/04/2017 |
| Description(Complete) [01-03-2017(online)].pdf | 01/03/2017 |
| Description(Complete) [01-03-2017(online)].pdf_271.pdf | 01/03/2017 |
| Drawing [01-03-2017(online)].pdf | 01/03/2017 |
| Form 3 [01-03-2017(online)].pdf | 01/03/2017 |
