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A BIPOLAR GATE DRIVE CIRCUIT FOR OPERATION OF DEPLETION MODE MOSFET/GAN HEMT

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A BIPOLAR GATE DRIVE CIRCUIT FOR OPERATION OF DEPLETION MODE MOSFET/GAN HEMT

ORDINARY APPLICATION

Published

date

Filed on 4 March 2020

Patent Information

Application ID202041009315
Date of Application04/03/2020

Documents

NameDate
202041009315-IntimationOfGrant08-11-2023.pdf08/11/2023
202041009315-PatentCertificate08-11-2023.pdf08/11/2023
202041009315-CLAIMS [27-04-2022(online)].pdf27/04/2022
202041009315-ENDORSEMENT BY INVENTORS [27-04-2022(online)].pdf27/04/2022
202041009315-FER_SER_REPLY [27-04-2022(online)].pdf27/04/2022
202041009315-FER.pdf02/11/2021
202041009315-Correspondence_07-10-2020.pdf07/10/2020
202041009315-Form1_Proof of Right_07-10-2020.pdf07/10/2020
202041009315-Form26_Power of Attorney_07-10-2020.pdf07/10/2020
202041009315-FORM-26 [26-09-2020(online)].pdf26/09/2020
202041009315-Proof of Right [26-09-2020(online)].pdf26/09/2020
202041009315-FORM 18 [05-03-2020(online)].pdf05/03/2020
202041009315-COMPLETE SPECIFICATION [04-03-2020(online)].pdf04/03/2020
202041009315-DECLARATION OF INVENTORSHIP (FORM 5) [04-03-2020(online)].pdf04/03/2020
202041009315-DRAWINGS [04-03-2020(online)].pdf04/03/2020
202041009315-FIGURE OF ABSTRACT [04-03-2020(online)].jpg04/03/2020
202041009315-FORM 1 [04-03-2020(online)].pdf04/03/2020
202041009315-STATEMENT OF UNDERTAKING (FORM 3) [04-03-2020(online)].pdf04/03/2020
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